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300HS 045984 OM6109SA STP4N 4N35SM 2811B PG201 1PMT5290
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  semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 3347 issue 2 bds16 bds16smd bds16smd05 bds17 BDS17SMD BDS17SMD05 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk bds16 bds17 v cbo collector - base voltage (i e = 0) v ceo collector - emitter voltage (i b = 0) v ebo emitter - base voltage (i c = 0) i e , i c emitter , collector current i b base current p tot total power dissipation at t case = 2 5c t stg storage temperature t j junction temperature 120v 150v 120v 150v 5v 8a 2a 43.75w ?65 to 200c 200c mechanical data dimensions in mm silicon npn epitaxial base in to220 metal and smd ceramic surface mount packages features ? hermetic metal or ceramic packages  high reliability  military and space options  screening to cecc levels  fully isolated (metal version) applications  power linear and switching applications  general purpose power absolute maximum ratings (t case =25c unless otherwise stated)          
           
          
          
          
         
              
          
          
           
          
          
           
          
          
           
         
         
         
      smd1(to276ab) - ceramic surface mount package pad 1 ? base pad 2 ? collector pad 3 ? emitter 2 1 3 2.41 (0.095) (0.030) min. 3.05 (0.120) 5.72 (.225) 0.127 (0.005) (0.296) 10.16 (0.400) 0.76 (0.030) min. 3.175 (0.125) max. 0.50 (0.020) max. 7.54 0.76 2.41 (0.095) 0.127 (0.005) (0.286) 7.26 16 plcs 0.50(0.020) 0.127 (0.005) smd05 (to276aa) - ceramic surface mount package pad 1 ? base pad 2 ? collector pad 3 ? emitter to220m - to220 metal package - isolated pin 1 ? base pin 2 ? collector pin 3 ? emitter
semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 3347 issue 2 bds16 bds16smd bds16smd05 bds17 BDS17SMD BDS17SMD05 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk parameter test conditions max. unit r thj-case thermal resistance junction - case max. 4.0 c/w parameter test conditions min. typ. max. unit collector cut-off current (i e = 0) collector cut-off current (i b = 0) emitter cut-off current (i c = 0) collector - emitter sustaining voltage (i b = 0) collector - emitter saturation voltage base - emitter voltage dc current gain transition frequency bds16 v cb = 120v bds17 v cb = 150v bds16 v ce = 60v bds17 v ce = 75v v eb = 5v bds16 bds17 i c = 4a i b = 0.4a i c = 0.5a i b = 0.05a i c = 1a v ce = 2v i c = 0.5a v ce = 2v i c = 4a v ce = 2v i c = 0.5a v ce = 10v f = 20mhz 20 20 0.1 0.1 10 120 150 1.5 0.4 1.0 40 250 15 150 30 a ma a v v v v mhz i cbo i ceo i ebo v ceo(sus)* v ce(sat)* v be(on)* h fe* f t electrical characteristics (t case = 25c unless otherwise stated) thermal data i c = 100ma t on t s t f on time (t d + t r ) storage time fall time i c = 2a v cc = 80v i b1 = 0.2a i c = 2a v cc = 80v i b1 = ?i b2 = 0.2a 0.5 1.5 0.3 s s s switching characteristics *pulsed : pulse duration = 300 s , duty cycle = 1.5%


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